The PMOS devices are more immune to noise than NMOS devices. When a low voltage is applied to the gate, the PMOS will conduct. When a high voltage is applied to the gate, the PMOS will not conduct. P- channel MOSFET consists of P-type Source and Drain diffused on an N-type substrate. NMOS is considered to be faster than PMOS, since the carriers in NMOS, which are electrons, travel twice as fast as the holes. Similarly, when a low voltage is applied to the gate, NMOS will not conduct. When a high voltage is applied to the gate, the NMOS will conduct. In NMOS, the majority of carriers are electrons. NMOS is built on a p-type substrate with n-type source and drain diffused on it. CMOS (Complementary Metal Oxide Semiconductor) NMOS Please refer to the link to know more about the fabrication process of CMOS transistor. Complementary Metal Oxide Semiconductor transistor consists of P-channel MOS (PMOS) and N-channel MOS (NMOS). This allows integrating more CMOS gates on an IC than in NMOS or bipolar technology, resulting in much better performance. Power is only dissipated in case the circuit actually switches. Unlike NMOS or BIPOLAR circuits, a Complementary MOS circuit has almost no static power dissipation. The main advantage of CMOS over NMOS and BIPOLAR technology is the much smaller power dissipation. CMOS (Complementary Metal Oxide Semiconductor)

Cmos pmos